|
|
UPA2730TPのメーカーはNECです、この部品の機能は「SWITCHING N- AND P-CHANNEL POWER MOS FET」です。 |
部品番号 | UPA2730TP |
| |
部品説明 | SWITCHING N- AND P-CHANNEL POWER MOS FET | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとUPA2730TPダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2730TP
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2730TP which has a heat spreader is P-Channel
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery
protection circuit.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.5 A)
RDS(on)2 = 10.5 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A)
RDS(on)3 = 12.0 mΩ MAX. (VGS = –4.0 V, ID = –7.5 A)
• Low Ciss: Ciss = 4670 pF TYP.
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
µPA2730TP
PACKAGE
Power HSOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
; Source
4 ; Gate
5, 6, 7, 8, 9 ; Drain
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
2.0 ±0.2
9
4.1 MAX.
85
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note1
Channel Temperature
VGSS
ID(DC)1
ID(DC)2
ID(pulse)
PT1
PT2
Tch
m20
m42
m20
m120
40
3
150
V
A
A
A
W
W
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to + 150 °C
IAS −15
A
EAS 22.5 mJ
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No. G15983EJ1V0DS00 (1st edition)
Date Published November 2002 NS CP(K)
Printed in Japan
2002
1 Page µPA2730TP
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
4
3.5
3
2.5
2
1.5
1
0.5
0
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on a glass epoxy board
(1 inch × 1 inch × 0.8 mm)
TA = 25°C , PW = 10 s , Single pulse
25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
- 1000
- 100
- 10
RDS(on)Lim ited
(at VGS = −10 V)
ID(pulse)
ID(DC)
PW =
100 µs
1 ms
- 1 Power Dissipation
Lim ited
10 ms
100 ms
- 0.1
Mounted on a glass epoxy board
(1 inch ×1 inch × 0.8 mm)
TA = 25°C , Single pulse
- 0.01
- 0.1 - 1 - 10
10 s
- 100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Rth(ch-A) = 89.3°C/W
10
Rth(ch-C) = 3.13°C/W
1
0.1
0.01
100 µ
Remark rth(ch-A) : Mounted on a glass epoxy board
(1 inch × 1 inch × 0.8 mm) , TA = 25°C
rth(ch-C) : TC = 25°C
1 m 10 m 100 m 1
10
PW - Pulse Width - s
100 1000
Data Sheet G15983EJ1V0DS
3
3Pages SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
- 100
- 10
IAS = −15 A
EAS = 22.5 m J
-1
VDD = −15 V
RG = 25 Ω
VGS = −20 → 0 V
- 0.1
Starting T ch = 25°C
0.01
0.1
1
L - Inductive Load - mH
10
µPA2730TP
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = −15 V
100
RG = 25 Ω
VGS = −20 → 0 V
IAS ≤ −15 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6 Data Sheet G15983EJ1V0DS
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ UPA2730TP データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA2730TP | SWITCHING N- AND P-CHANNEL POWER MOS FET | NEC |
UPA2730TP | P-CHANNEL POWER MOSFET | NEC |