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UPA2706GRのメーカーはNECです、この部品の機能は「SWITCHING N- AND P-CHANNEL POWER MOS FET」です。 |
部品番号 | UPA2706GR |
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部品説明 | SWITCHING N- AND P-CHANNEL POWER MOS FET | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとUPA2706GRダウンロード(pdfファイル)リンクがあります。 Total 7 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2706GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2706GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
• Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A)
RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2706GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±11 A
±44 A
2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to + 150 °C
IAS 11 A
EAS 12.1 mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16236EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2003
1 Page µPA2706GR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic substrate of
2.4 1200 mm2 x 2.2 mm
2
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
PW = 100 µs
ID(DC)
1 ms
10
RDS(on) Limited
DC
1 (at VGS = 10 V)
100 ms
10 ms
Power Dissipation Limited
0.1 TA = 25°C
Single Pulse
Mounted on ceramic substrate of
1200 mm2 x 2.2 mm
0.01
0.01 0.1
1
10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100 Rth(ch-A) = 62.5°C/W
10
1
0.1
1m
10 m
100 m
1
PW - Pulse Width - s
Mounted on ceramic substrate of
1200 mm2 × 2.2 mm
Single Pulse TA = 25°C
10 100 1000
Data Sheet G16236EJ1V0DS
3
3Pages SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
VDD = 15 V
VGS = 20 → 0 V
RG = 25 Ω
Starting Tch = 25°C
10
EAS = 12.1 mJ
1
0.00001
0.0001
0.001
L - Inductive Load - H
0.01
µPA2706GR
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 15 V
VGS = 20 → 0 V
100 RG = 25 Ω
IAS ≤ 11 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6 Data Sheet G16236EJ1V0DS
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
UPA2706GR | SWITCHING N- AND P-CHANNEL POWER MOS FET | NEC |