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UPA2708TPのメーカーはNECです、この部品の機能は「SWITCHING N- AND P-CHANNEL POWER MOS FET」です。 |
部品番号 | UPA2708TP |
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部品説明 | SWITCHING N- AND P-CHANNEL POWER MOS FET | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとUPA2708TPダウンロード(pdfファイル)リンクがあります。 Total 7 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2708TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2708TP which has a heat spreader is N-
channel MOS Field Effect Transistor designed for
DC/DC converter and power management applications
of notebook computer.
FEATURES
• Low on-state resistance
RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2708TP-E1
µ PA2708TP-E1-AZ Note
Power HSOP8
Power HSOP8
µ PA2708TP-E2
µ PA2708TP-E2-AZ Note
Power HSOP8
Power HSOP8
Note Pb-free (This product does not contain Pb in
external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±40
±68
A
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation Note2
PT1 34 W
PT2 4.3 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
−55 to +150
°C
IAS 17 A
EAS 28.9 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Ambient Note
Rth(ch-A)
96.2
Channel to Case
Rth(ch-C)
3.68
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17034EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004
1 Page µ PA2708TP
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(DC)
ID(pulse)
10
1ms
1 10ms
DC
TC = 25°C
Single pulse
0.1
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 96.2°C/W
10
Rth(ch-C) = 3.68°C/W
1
0.1
SSiinnggllee ppuullssee
Rth(ch-A): Mounted on a galass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 25°C
0.01 Rth(ch-C): TC = 25°C
100 µ
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
70
60
50
40
30
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
4.5 V
Pulsed
0.1 0.2 0.3 0.4
VDS - Drain to Source Voltage - V
0.5
FORWARD TRANSFER CHARACTERISTICS
100
Tch = −55°C
25°C
10
75°C
150°C
1
0.1
0.01
1
VDS = 10 V
Pulsed
234
VGS - Gate to Source Voltage - V
5
Data Sheet G17034EJ1V0DS
3
3Pages µ PA2708TP
PACKAGE DRAWING (Unit: mm)
Power HSOP8
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8, 9: Drain
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
2.0 ±0.2
9
4.1 MAX.
85
0.10 S
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6 Data Sheet G17034EJ1V0DS
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
UPA2708TP | SWITCHING N- AND P-CHANNEL POWER MOS FET | NEC |