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PDF 2SK3575 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3575 | |
| Descripción | Switching N-Channel Power MOS FET | |
| Fabricantes | NEC Electronics | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3575
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
5 ORDERING INFORMATION
The 2SK3575 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
PART NUMBER
2SK3575
2SK3575-S
2SK3575-ZK
2SK3575-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMDNote
FEATURES
•4.5V drive available
Note TO-220SMD package is produced only in Japan.
•Low on-state resistance
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
•Low gate charge
QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A)
•Avalanche capability ratings
•Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
30
±20
±83
±332
1.5
105
150
–55 to +150
57
325
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16261EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
2002
1 page  
2SK3575
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
ID = 42 A
Pulsed
6 VGS = 4.5 V
4
10 V
2
0
-50
0
50 100 150
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(on)
td(off)
tf
VDD = 10 V
VGS = 10 V
RG = 10 Ω
10 tr
1
0.1
1 10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
0V
1
0.1
0.01
0
0.2 0.4 0.6 0.8
pulsed
1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
C rss
100
10
0.1
VGS = 0 V
f = 1 MHz
1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12
25
VDD = 24 V
20 15 V
10
8
VGS
15 6
10 4
5 VDS
2
ID = 83 A
00
0 20 40 60 80
QG - Gate Change - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ms
VGS = 0 V
100
10
1
0.1
1 10
ID - Drain Current - A
100
Data Sheet D16261EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3575.PDF ] | |
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