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IXUC120N10 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXUC120N10
部品説明 Trench Power MOSFET ISOPLUS220
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXUC120N10 Datasheet, IXUC120N10 PDF,ピン配置, 機能
ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET IXUC 120N10
ISOPLUS220TM
Electrically Isolated Back Surface
VDSS =
ID25 =
RDS(on) =
100 V
120 A
9.5 m
ISOPLUS 220TM
Symbol
Test Conditions
VDSS
VGS
ID25
I
D90
IS25
IS90
ID(RMS)
EAS
PD
T
J
T
JM
T
stg
TL
V
ISOL
FC
Weight
T
J
= 25°C to 150°C
Continuous
TC = 25°C; Note 1
TC = 90°C, Note 1
TC = 25°C; Note 1, 2
TC = 90°C, Note 1, 2
Package lead current limit
T
C
= 25°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
Maximum Ratings
100 V
±20 V
120 A
90 A
120 A
90 A
45 A
tlb mJ
300 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
2g
Symbol
RDS(on)
VGS(th)
IDSS
IGSS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, ID = 90 A, Note 3
7.3 9.5 m
VGS = 10 V, ID = ID90,
TJ = 125°C Note 3
18
m
VDS = VGS, ID = 2 mA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
0.2
4V
20 µA
mA
VGS = ±20 VDC, VDS = 0
±200 nA
G
D
S
G = Gate,
S = Source
Isolated back surface*
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Trench MOSFET
- very low RDS(on)
- fast switching
- usable intrinsic reverse diode
l Low drain to tab capacitance(<15pF)
l Unclamped Inductive Switching (UIS)
rated
Applications
l Automotive 42V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l Power supplies
- DC - DC converters
- Solar inverters
l Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
© 2002 IXYS All rights reserved
98901 (2/02)

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