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IRFP460のメーカーはIntersil Corporationです、この部品の機能は「500V, 20A, N-Channel Power MOSFET」です。 |
部品番号 | IRFP460 |
| |
部品説明 | 500V, 20A, N-Channel Power MOSFET | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとIRFP460ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Data Sheet
IRFP460
July 1999 File Number 2291.3
20A, 500V, 0.270 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17465.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP460
TO-247
IRFP460
NOTE: When ordering, use the entire part number.
Features
• 20A, 500V
• rDS(ON) = 0.270Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
4-359
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 Page IRFP460
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
D - - 20 A
- - 80 A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
S
VSD
TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13)
-
-
trr TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs
280 580
QRR
TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs
3.8 8.1
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25Ω, Peak IAS = 20A.
1.8
1200
18
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.1 0.2
0.1
0.05
10-2
0.02
0.01
SINGLE PULSE
10-3
10-5
10-4
PDM
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-361
3Pages Test Circuits and Waveforms
IRFP460
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
IG(REF)
0
S
VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-364
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
IG(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ IRFP460 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFP460 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRFP460 | 20A, 500V, Power MOSFET | Fairchild Semiconductor |
IRFP460 | 20A, 500V, Power MOSFET | International Rectifier |
IRFP460 | 500V, 20A, N-Channel Power MOSFET | Intersil Corporation |