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PDF IRFP460LC Data sheet ( Hoja de datos )
| Número de pieza | IRFP460LC | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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HEXFET® Power MOSFET
PD - 9.1232
IRFP460LC
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
VDSS = 500V
RDS(on) = 0.27Ω
ID = 20A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
20
12
80
280
2.2
±30
960
20
28
3.5
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
––––
Units
°C/W
40
To Order
Revision 0
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20
16
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFP460LC
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0 .1 0
0 .0 5
0.02
0.01
0.001
0.00001
PD M
SING LE PULSE
(THERM AL RESPO NSE)
0.0001
N o tes :
1. Duty factor D = t1 / t 2
t1
t2
2 . P e a k TJ = PD M x Z th J C + TC
0.001
0.01
0.1
1
t1 , R ectangular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP460LC.PDF ] | |
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