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IRFP460N の電気的特性と機能

IRFP460NのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP460N
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFP460N Datasheet, IRFP460N PDF,ピン配置, 機能
PD-94098
SMPS MOSFET
IRFP460N
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
VDSS
500V
Rds(on) max
0.24
ID
20A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN1001)
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
20
13
80
280
2.2
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Notes  through … are on page 8
www.irf.com
1
05/22/01

1 Page





IRFP460N pdf, ピン配列
100
TOP
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1
0.1
0.01
0.001
0.1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFP460N
100
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
5.0V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25° C
1
0.1
5
V DS = 50V
20µs PULSE WIDTH
6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
11
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 ID = 20A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFP460N 電子部品, 半導体
IRFP460N
15V
VDS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
D R IV E R
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
750
ID
TOP
8.9A
12.6A
600 BOTTOM 20A
450
300
150
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


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