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PDF IRFP460P Data sheet ( Hoja de datos )
| Número de pieza | IRFP460P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFP460P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
l Solder Plated for Reflowing
Description
Third Generation HEXFET®s from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
G
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance
between pins to meet the requirements of most safety
specifications.
The solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Maximum Reflow Temperature
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD-93946A
IRFP460P
HEXFET® Power MOSFET
D
VDSS = 500V
RDS(on) = 0.27Ω
ID = 20A
S
TO-247AC
Max.
20
13
80
280
2.2
± 20
960
20
28
3.5
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183 °C
should not exceed 100s)
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
°C
Units
°C/W
1
01/17/01
1 page  
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFP460P
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP460P.PDF ] | |
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