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IRFP450B の電気的特性と機能

IRFP450BのメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP450B
部品説明 500V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRFP450B Datasheet, IRFP450B PDF,ピン配置, 機能
November 2001
IRFP450B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 14A, 500V, RDS(on) = 0.39@VGS = 10 V
• Low gate charge ( typical 87 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G!
G DS
TO-3P
IRFP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
D
!
◀▲
!
S
IRFP450B
500
14
8.8
56
± 30
990
14
20.5
5.5
205
1.64
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.61
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

1 Page





IRFP450B pdf, ピン配列
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101 6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
V = 10V
1.2 GS
0.9 VGS = 20V
0.6
0.3
Note : TJ = 25
0.0
0 10 20 30 40 50 60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
4000
3000
2000
1000
Ciss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100 25oC
10-1
2
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 100V
V = 250V
DS
8 VDS = 400V
6
4
2
Note : ID = 14 A
0
0 10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001


3Pages


IRFP450B 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

6 Page



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