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H8NA60FI PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H8NA60FI
部品説明 STH8NA60FI
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 



Total 10 pages
		

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H8NA60FI Datasheet, H8NA60FI PDF,ピン配置, 機能
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STW8NA60
® STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 8NA60
S TH8NA 60F I
V DSS
600 V
600 V
RDS(on)
<1
<1
ID
8A
5A
s TYPICAL RDS(on) = 0.92
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1998
Valu e
ST W8NA60 STH8NA60FI
6 00
6 00
± 30
85
5.1 3.2
32 32
150 60
1.2 0.48
4000
-65 to 150
1 50
Unit
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10

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