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50N02-09 の電気的特性と機能

50N02-09のメーカーはVishay Siliconixです、この部品の機能は「SUB50N02-09」です。


製品の詳細 ( Datasheet PDF )

部品番号 50N02-09
部品説明 SUB50N02-09
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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50N02-09 Datasheet, 50N02-09 PDF,ピン配置, 機能
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V
0.017 @ VGS = 4.5 V
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TO-252
ID (A)a
20
15
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
D Desktop
Server
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC= 100_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
"20
20
14
100
4.3
29
42
6.5a
39.5
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
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1

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50N02-09 pdf, ピン配列
SUD50N02-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
60
TC = 55_C
50
25_C
40
125_C
0.030
0.025
0.020
30 0.015
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10
0.010
0.005
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0
0
2000
10 20 30 40
ID Drain Current (A)
Capacitance
50
0.000
0
10
20 40 60 80
ID Drain Current (A)
Gate Charge
100
1600
1200
Ciss
8
IVDD=S
= 10
50 A
V
6
800
400
0
0
Crss
Coss
4 8 12 16
VDS Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6 ID = 30 A
1.4
1.2
1.0
0.8
0.6
50 25
0 25 50 75 100 125 150 175
TJ Junction Temperature (_C)
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
4
2
0
0 4 8 12 16 20
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
TJ = 150_C
10
TJ = 25_C
1
0
0.3 0.6 0.9 1.2
VSD Source-to-Drain Voltage (V)
1.5
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3


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共有リンク

Link :


部品番号部品説明メーカ
50N02-09

SUB50N02-09

Vishay Siliconix
Vishay Siliconix


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