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PDF P6NC60 Data sheet ( 特性 )

部品番号 P6NC60
部品説明 STP6NC60
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 

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P6NC60 Datasheet, P6NC60 PDF,ピン配置, 機能
STP6NC60 - STP6NC60FP
STB6NC60-1
N-CHANNEL 600V - 1- 6A TO-220/TO-220FP/I2PAK
PowerMESH™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP(B)6NC60(-1)
www.DataSheet4U.cSoTmP6NC60FP
600 V
600 V
< 1.2
< 1.2
6A
6A
s TYPICAL RDS(on) = 1.0
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
2
1
TO-220FP
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
May 2001
Value
STP(B)6NC60(-1) STP6NC60FP
600
600
±30
6 6(*)
3.8 3.8(*)
24 24(*)
125 40
1.0 0.32
3
- 2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
(1)ISD 6A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
1/10

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