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STD12NF06L の電気的特性と機能

STD12NF06LのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD12NF06L
部品説明 N-CHANNEL POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STD12NF06L Datasheet, STD12NF06L PDF,ピン配置, 機能
STD12NF06L
N-CHANNEL 60V - 0.08 - 12A IPAK/DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD12NF06L
60 V
< 0.1
12 A
s TYPICAL RDS(on) = 0.08
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE
s LOW THRESHOLD DRIVE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
June 2003
.
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
60
60
± 16
12
8.5
48
30
0.2
15
100
-55 to 175
(1) ISD 12A, di/dt 200A/µs, VDD=40V, Tj TJMAX
(2) Starting Tj = 25 oC, IAR = 6A, VDD= 30V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
1/10

1 Page





STD12NF06L pdf, ピン配列
STD12NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 6 A
RG = 4.7
VGS = 4.5 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 48 V ID = 12 A VGS= 5V
Min.
Typ.
10
35
7.5
2.5
3.0
Max.
10
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID = 6 A
RG = 4.7
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
20
13
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 12 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 12 A
di/dt = 100A/µs
VDD = 16 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
50
67
2.5
Max.
12
48
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10


3Pages


STD12NF06L 電子部品, 半導体
STD12NF06L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
STD12NF06

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD12NF06L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics


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