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PDF STD100NH03L Data sheet ( Hoja de datos )
| Número de pieza | STD100NH03L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD100NH03L
N-CHANNEL 30V - 0.005 Ω - 60A DPAK
STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD100NH03L
30 V < 0.0055 Ω 60 A(2)
s TYPICAL RDS(on) = 0.005 Ω @ 10 V
s RDS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD100NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD100NH03LT4
MARKING
D100NH03L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(2) Drain Current (continuous) at TC = 25°C
ID(2) Drain Current (continuous) at TC = 100°C
IDM(3)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (4) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
September 2003
PACKAGE
TO-252
Value
30
30
± 20
60
60
240
100
0.66
700
-55 to 175
PACKAGING
TAPE & REEL
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11
1 page  
STD100NH03L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/11
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STD100NH03L.PDF ] | |
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