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STD10NF10 の電気的特性と機能

STD10NF10のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD10NF10
部品説明 N-CHANNEL POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STD10NF10 Datasheet, STD10NF10 PDF,ピン配置, 機能
STD10NF10
N-CHANNEL 100V - 0.115 - 13A IPAK/DPAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD10NF10
100 V <0.13
13 A
s TYPICAL RDS(on) = 0.115
s EXCEPTIONAL dv/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
June 2002
.
Value
100
100
± 20
13
9
52
50
0.33
9
70
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 13A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD = 50V
1/10

1 Page





STD10NF10 pdf, ピン配列
STD10NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 5 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 80V ID = 10A VGS= 10V
Min.
Typ.
16
25
15.3
3.7
4.7
Max.
21
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 27 V
ID = 5 A
RG = 4.7Ω, VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
32
8
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 10 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 10 A
di/dt = 100A/µs
VDD = 50 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
90
230
5
Max.
13
52
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10


3Pages


STD10NF10 電子部品, 半導体
STD10NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
STD10NF10

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD10NF10-1

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics


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