|
|
PDF STD110NH02L Data sheet ( Hoja de datos )
| Número de pieza | STD110NH02L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STD110NH02L (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
STD110NH02L
N-CHANNEL 24V - 0.0044 Ω - 80A DPAK
STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD110NH02L
24 V < 0.005 Ω 80 A(2)
s TYPICAL RDS(on) = 0.0044 Ω @ 10 V
s TYPICAL RDS(on) = 0.0056 Ω @ 5 V
s RDS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD110NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(2) Drain Current (continuous) at TC = 25°C
ID(2) Drain Current (continuous) at TC = 100°C
IDM(3)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
September 2003
Value
30
24
24
± 20
80
80
320
125
0.83
900
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11
1 page  
STD110NH02L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/11
5 Page 
STD110NH02L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STD110NH02L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STD110NH02L | N-CHANNEL POWER MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |