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STD16NE06L-1 の電気的特性と機能

STD16NE06L-1のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD16NE06L-1
部品説明 N-CHANNEL POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STD16NE06L-1 Datasheet, STD16NE06L-1 PDF,ピン配置, 機能
® STD16NE06L-1
N - CHANNEL 60V - 0.07 - 16A - TO-251
STripFET" POWER MOSFET
TYPE
VDSS
RDS(on)
STD16NE06L-1
60 V < 0.085
s TYPICAL RDS(on) = 0.07
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
16 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
PRELIMINARY DATA
3
2
1
DPAK
TO-251
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1998
Value
Unit
60 V
60 V
± 20
V
16 A
11 A
64 A
40 W
0.3 W/oC
7
-65 to 175
175
(1) ISD 16 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/5

1 Page





STD16NE06L-1 pdf, ピン配列
ST16NE06L1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 30 V
RG =4.7
ID = 10 A
VGS = 5 V
Qg Total Gate Charge
VDD = 48 V ID = 20 A VGS = 5 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Min.
Typ.
20
45
Max.
30
60
Unit
ns
ns
14 20 nC
8 nC
4 nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 20 A
RG =4.7 VGS = 5 V
Min.
Typ.
10
25
42
Max.
14
34
60
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 16 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 20 A
VDD = 30 V
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
20
80
Unit
A
A
1.5
65
130
4
V
ns
µC
A
3/5


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共有リンク

Link :


部品番号部品説明メーカ
STD16NE06L-1

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics


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