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STD17N05のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STD17N05 |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD17N05ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
STD17N05
STD17N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD17N05
STD17N06
VDSS
50 V
60 V
R DS( on)
< 0.085 Ω
< 0.085 Ω
ID
17 A
17 A
s TYPICAL RDS(on) = 0.06 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Val ue
STD17N05
STD17N06
50 60
50 60
± 20
17
12
68
55
0 .3 7
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10
1 Page STD17N05/STD17N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V ID = 8.5 A
RG = 50 Ω
VGS = 10 V
(see test circuit figure)
VDD = 40 V ID = 17 A
RG = 50 Ω
VGS = 10 V
(see test circuit figure)
VDD = 40 V ID = 17 A VGS = 10 V
Min.
Typ.
20
120
250
22
8
8
Max.
30
170
30
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 17 A
RGS = 50 Ω VGS = 10 V
(see test circuit figure)
Min.
Typ.
60
60
120
Max.
90
90
180
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 17 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 17 A
VDD = 30 V
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
17
68
Unit
A
A
65
0. 13
4
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/10
3Pages STD17N05/STD17N06
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
6/10
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ STD17N05 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STD17N05 | N-CHANNEL POWER MOSFET | ST Microelectronics |
STD17N06 | N-CHANNEL POWER MOSFET | ST Microelectronics |