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Número de pieza | IRG4BC20K-S | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | IRF | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG4BC20K-S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD - 91620A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGBC20K-S and
IRGBC20M-S devices
Absolute Maximum Ratings
IRG4BC20K-S
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
D 2Pak
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)V
Weight
Max.
600
16
9.0
32
32
10
±20
29
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Typ.
–––
0.5
–––
1.44
Max.
2.1
–––
40
–––
www.irf.com
Units
V
A
µs
V
mJ
W
°C
Units
°C/W
g
1
4/24/2000
1 page 800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20K-S
20
VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5 VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 9A.0A
0.4
0.3
10 RG = O50hΩm
VGE = 15V
VCC = 480V
1
IC = 18 A
IC = 9.09AA
IC = 4.5 A
0.2
0
10 20 30 40
RGRG, G, GaateteRReessisisttaanncce (OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRG4BC20K-S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4BC20K-S | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
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