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IRG4BC20S の電気的特性と機能

IRG4BC20SのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC20S
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




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IRG4BC20S Datasheet, IRG4BC20S PDF,ピン配置, 機能
PD - 91597A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20S
Standard Speed IGBT
Features
Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 10A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
19
10
38
38
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000

1 Page





IRG4BC20S pdf, ピン配列
IRG4BC20S
30
25
20
Sq uare wave:
1 5 6 0 % o f ra te d
voltage
10
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power D issipation = 13W
5 Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Triangular wave:
C lamp voltage:
8 0% o f ra ted
A
100
100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC20S 電子部品, 半導体
IRG4BC20S
8.0 RG = 50Ohm
T J = 150° C
VCC = 480V
VGE = 15V
6.0
100
VGE = 20V
T J = 125 oC
4.0 10
2.0
0.0
0
4 8 12 16
I C , Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
20 1 10 100
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



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共有リンク

Link :


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