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IRG4BC20W の電気的特性と機能

IRG4BC20WのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC20W
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




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IRG4BC20W Datasheet, IRG4BC20W PDF,ピン配置, 機能
PD 91652B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20W
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.16V
@VGE = 15V, IC = 6.5A
TO-220AB
Max.
600
13
6.5
52
52
± 20
200
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
12/30/00

1 Page





IRG4BC20W pdf, ピン配列
25
20
15
S qu are wave:
60 % of rated
v oltag e
10
IRG4BC20W
For both:
Duty cycle: 50%
TJ = 125° C
Tsink = 90°C
G ate drive as specified
Po w er D iss ip ation = 13 W
Trian gu la r w a ve:
C lam p vo lta ge:
80% of rated
5
Ideal diodes
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
A
1000
100 100
10
TJ = 150 °C
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
TJ = 150 °C
10
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 9 10 11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC20W 電子部品, 半導体
IRG4BC20W
0.8 RG = 5O0hm
T J = 150° C
VCC = 480V
VGE = 15V
0.6
100
VGE = 20V
T J = 125 oC
0.4 10
0.2
0.0
0
2 4 6 8 10 12
I C , Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
14 1 10 100
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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