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PDF IRGPH50M Data sheet ( Hoja de datos )
| Número de pieza | IRGPH50M | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
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PD - 9.1030
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency
curve
C
G
E
n-channel
IRGPH50M
Short Circuit Rated
Fast IGBT
VCES = 1200V
VCE(sat) ≤ 2.9V
@VGE = 15V, IC = 23A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
42
23
84
84
10
±20
20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
0.64
—
40
—
Units
°C/W
g (oz)
C-471
Revision 1
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IRGPH50M
4000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , C ce SHO R TED
C res = C gc
C oes= C ce + C gc
3000
Coes
C ies
2000
1000
C re s
0
1 10 100
V C E , C ollector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
6.0
VCC = 960V
VGE = 15V
5.8
TC
IC
= 25°C
= 23A
5.6
5.4
5.2
5.0
4.8
0
A
10 20 30 40 50 60
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 23A
16
12
8
4
0
0 20 40 60 80
QG , Total Ga te C ha rge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
100
RG = 5 Ω
V GE = 15V
V CC = 960V
10
I C = 46A
I C = 23A
I C = 11A
1
-60 -4 0 -20 0 20 40 60 80 100 120 140 160
TC , Ca se Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-475
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGPH50M.PDF ] | |
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