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PDF IRGPH50MD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGPH50MD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
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PD - 9.1047A
IRGPH50MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFRED TM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Short Circuit Rated
Fast CoPack IGBT
VCES = 1200V
VCE(sat) ≤ 2.9V
@VGE = 15V, IC = 23A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-481
TO-247AC
Max.
1200
42
23
84
84
16
84
10
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.64
0.83
—
40
—
Units
°C/W
g (oz)
Revision 1
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IRGPH50MD2
4000
3000
2000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , C ce SHO R TED
C res = C gc
C oes= C ce + C gc
Coes
C ies
1000
C re s
0
1 10 100
V C E , C ollector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
6.0
VCC = 960V
VGE = 15V
5.8
TC
IC
= 25°C
= 23A
5.6
5.4
5.2
5.0
4.8
0
A
10 20 30 40 50 60
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 23A
16
12
8
4
0
0 20 40 60 80
QG , Total Ga te C ha rge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
100
RG = 5 Ω
V GE = 15V
V CC = 960V
10
I C = 46A
I C = 23A
I C = 11A
1
-60 -4 0 -20 0 20 40 60 80 100 120 140 160
TC , Ca se Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-485
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| PDF Descargar | [ Datasheet IRGPH50MD2.PDF ] | |
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