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IRGPS40B120U の電気的特性と機能

IRGPS40B120UのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGPS40B120U
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




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IRGPS40B120U Datasheet, IRGPS40B120U PDF,ピン配置, 機能
PD- 94295B
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
C
G
E
N-channel
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
80
40
160
160
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Le
www.irf.com
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
1
1/28/04

1 Page





IRGPS40B120U pdf, ピン配列
IRGPS40B120U
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
700
600
500
400
300
200
100
0
0 50 100 150 200
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100 2 µs
10 µs
10 100 µs
1ms
1 10ms
DC
0.1
1
10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJS 150°C
www.irf.com
100
10
1
10
100 1000
VCE (V)
10000
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3


3Pages


IRGPS40B120U 電子部品, 半導体
IRGPS40B120U
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
EON
EOFF
20 40 60
IC (A)
80
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 125°C; L=200µH; VCE= 600V
RG= 4.7; VGE= 15V
1000
tdOFF
100 tdON
tR
tF
10
20
40 60
IC (A)
80
Fig. 13 - Typ. Switching Time vs. IC
TJ = 125°C; L=200µH; VCE= 600V
RG= 4.7; VGE= 15V
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
EOFF
EON
5 10 15 20
RG ()
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 125°C; L=200µH; VCE= 600V
ICE= 40A; VGE= 15V
6
1000
tdOFF
100 tdON
tR
tF
10
25 0
5 10 15 20 25
RG ()
Fig. 15 - Typ. Switching Time vs. RG
TJ = 125°C; L=200µH; VCE= 600V
ICE= 40A; VGE= 15V
www.irf.com

6 Page



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共有リンク

Link :


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IRGPS40B120U

INSULATED GATE BIPOLAR TRANSISTOR

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