DataSheet.jp

IRGPC50FD2 の電気的特性と機能

IRGPC50FD2のメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGPC50FD2
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




このページの下部にプレビューとIRGPC50FD2ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRGPC50FD2 Datasheet, IRGPC50FD2 PDF,ピン配置, 機能
Previous Datasheet
Index
Next Data Sheet
PD - 9.800
IRGPC50FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Fast CoPack IGBT
VCES = 600V
VCE(sat) 1.7V
@VGE = 15V, IC = 39A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-125
TO-247AC
Max.
600
70
39
280
280
25
280
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
Typ.
0.24
6 (0.21)
Max.
0.64
0.83
40
Units
°C/W
g (oz)
Revision 1
To Order

1 Page





IRGPC50FD2 pdf, ピン配列
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
30
25
20
60% of rated
15 v olta ge
10
5
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G a te d rive as sp e cified
Tu rn -on lo sses in clud e
effe cts o f re verse rec ove ry
P o w e r D issipatio n = 4 0W
A
100
1000
100
TJ = 25 °C
TJ = 1 50 °C
1000
100
TJ = 2 5°C
TJ = 1 5 0°C
10
VGE = 15V
20µs PULSE WIDTH
1
0.1 1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
10
VCC = 100V
5µs PULSE W IDTH
1
5 10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
C-127
To Order


3Pages


IRGPC50FD2 電子部品, 半導体
Previous Datasheet
Index
Next Data Sheet
IRGPC50FD2
40
RG = 5
T C = 150°C
VCC = 480V
VGE = 15V
30
20
10
0A
0 20 40 60 80
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
VGGEE= 20 V
TJ = 125°C
SAFE OPERATING AREA
100
10
1
1 10 100 1000
VCE , C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
TJ = 150°C
TJ = 125°C
10 TJ = 25°C
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-130
To Order

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRGPC50FD2 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRGPC50FD2

INSULATED GATE BIPOLAR TRANSISTOR

IRF
IRF


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap