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IRGPC50FD2のメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGPC50FD2 |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | IRF | ||
ロゴ | |||
このページの下部にプレビューとIRGPC50FD2ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
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PD - 9.800
IRGPC50FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Fast CoPack IGBT
VCES = 600V
VCE(sat) ≤ 1.7V
@VGE = 15V, IC = 39A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-125
TO-247AC
Max.
600
70
39
280
280
25
280
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.64
0.83
—
40
—
Units
°C/W
g (oz)
Revision 1
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IRGPC50FD2
30
25
20
60% of rated
15 v olta ge
10
5
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G a te d rive as sp e cified
Tu rn -on lo sses in clud e
effe cts o f re verse rec ove ry
P o w e r D issipatio n = 4 0W
A
100
1000
100
TJ = 25 °C
TJ = 1 50 °C
1000
100
TJ = 2 5°C
TJ = 1 5 0°C
10
VGE = 15V
20µs PULSE WIDTH
1
0.1 1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
10
VCC = 100V
5µs PULSE W IDTH
1
5 10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
C-127
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IRGPC50FD2
40
RG = 5Ω
T C = 150°C
VCC = 480V
VGE = 15V
30
20
10
0A
0 20 40 60 80
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
VGGEE= 20 V
TJ = 125°C
SAFE OPERATING AREA
100
10
1
1 10 100 1000
VCE , C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
TJ = 150°C
TJ = 125°C
10 TJ = 25°C
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-130
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRGPC50FD2 | INSULATED GATE BIPOLAR TRANSISTOR | IRF |