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IRGP30B60KD-EのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGP30B60KD-E |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | IRF | ||
ロゴ | |||
このページの下部にプレビューとIRGP30B60KD-Eダウンロード(pdfファイル)リンクがあります。 Total 12 pages
PD - 94388B
IRGP30B60KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-247AD Package
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 30A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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TO-247AD
Max.
600
60
30
120
120
60
30
120
±20
304
122
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0
Max.
0.41
1.32
–––
40
–––
Units
°C/W
g
1
02/27/06
1 Page IRGP30B60KD-E
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
10 µs
10
100 µs
1 1ms
DC
0.1
1
10 100 1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
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10000
100
10
1
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
1000
3
3Pages IRGP30B60KD-E
3000
2500
2000
1500
1000
EOFF
EON
500
0
0 20 40 60 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 400V
RG = 10Ω; VGE = 15V
1000
tdOFF
100
tdON
tF
tR
10
0
20 40 60
IC (A)
80
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 400V
RG = 10Ω; VGE = 15V
3000
10000
2500
2000
1500
EOFF
EON
1000
tdOFF
1000
500
0
0
25 50 75 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 400V
ICE = 30A; VGE = 15V
6
125
100
tdON
tR
10
0
25
tF
50 75
RG (Ω)
100 125
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 400V
ICE = 30A; VGE = 15V
www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRGP30B60KD-E | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
IRGP30B60KD-EP | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |