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IRGP430U の電気的特性と機能

IRGP430UのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP430U
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




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IRGP430U Datasheet, IRGP430U PDF,ピン配置, 機能
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.780A
IRGP430U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 500V
VCE(sat) 3.0V
@VGE = 15V, IC = 15A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
500
25
15
50
50
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-599
Min.
Typ.
0.24
6 (0.21)
Max.
1.2
40
Units
°C/W
g (oz)
Revision 0
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IRGP430U pdf, ピン配列
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IRGP430U
40
30
Square wave:
20 60% of rated
voltage
For bo th:
Duty cycle: 50%
TJ = 12 5°C
Tsink = 90°C
G ate drive as specifie d
Power Dissipation = 24W
Tria ngular wave:
Clam p voltage:
80% of rated
10
Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
TJ = 25 °C
TJ = 1 50 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25 °C
1
0.1
5
VCC = 100V
5µs PULSE W IDTH
10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
C-601
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3Pages


IRGP430U 電子部品, 半導体
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IRGP430U
2.0
RG = 23
T C = 150°C
V CC = 400V
1.6 V G E = 15V
1.2
0.8
0.4
0.0
0 10 20 30 40
IC , Collector-to-Em itter C urrent (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
VGE = 20V
TJ = 125°C
SAFE OPERATING AREA
10
1A
1 10 100 1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix A: Section D - page D-3
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC
Section - page D-13
C-604
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6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRGP430U

INSULATED GATE BIPOLAR TRANSISTOR

IRF
IRF
IRGP430UD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF
IRF


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