|
|
Número de pieza | IRGP430UD2 | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
Fabricantes | IRF | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRGP430UD2 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Previous Datasheet
Index
Next Data Sheet
PD - 9.1063
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP430UD2
UltraFast CoPack IGBT
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
VCES = 500V
VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 15A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-633
TO-247AC
Max.
500
25
15
50
50
12
50
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
1.2
2.5
—
40
—
Units
°C/W
g (oz)
Revision 1
To Order
1 page Previous Datasheet
Index
Next Data Sheet
IRGP430UD2
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200
Cres = C gc
Coes = C ce + C gc
100 0 Cies
800 Coes
600
400 Cres
200
0
1 10 100
V CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.15
VCC = 400V
VGE = 15V
TC = 25°C
I C = 15A
1.12
1.09
1.06
1.03
0
10 20 30 40 50
RG , Gate Resistance (Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 15A
16
12
8
4
0
0 10 20 30
Q G , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
40
10
RG = 23Ω
VGE = 15V
VCC = 400V
1
I C = 30A
IC = 15A
IC = 7.5A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-637
To Order
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRGP430UD2.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGP430UD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRF |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |