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IRGP440U の電気的特性と機能

IRGP440UのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP440U
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




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IRGP440U Datasheet, IRGP440U PDF,ピン配置, 機能
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.779A
IRGP440U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 500V
VCE(sat) 3.0V
@VGE = 15V, IC = 22A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
500
40
22
80
80
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-605
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
40
Units
°C/W
g (oz)
Revision 0
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1 Page





IRGP440U pdf, ピン配列
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IRGP440U
60
50
40
Square wave:
30 60% of rated
v o lta g e
20
For both:
D uty cycle : 50%
TJ = 1 25°C
Tsink = 90°C
G ate drive as specified
P ow er D issipation = 35W
Triangular w ave:
C lam p voltage:
80% of rated
10 Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
1000
1000
100
TJ = 2 5°C
TJ = 1 50 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
100
TJ = 150°C
10 TJ = 25°C
VCC = 100V
5µs PULSE W ID TH
1
5 10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
C-607
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3Pages


IRGP440U 電子部品, 半導体
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IRGP440U
3.0
RG = 10
TC = 150°C
VCC = 400V
VGE = 15V
2.0
1.0
1000
VGGEE= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
0.0
0 10 20 30 40 50
IC , C ollector-to-Em itter C urrent (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix A: Section D - page D-3
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC
Section D - page D-13
C-610
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6 Page



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共有リンク

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部品番号部品説明メーカ
IRGP440U

INSULATED GATE BIPOLAR TRANSISTOR

IRF
IRF
IRGP440UD2

INSULATED GATE BIPOLAR TRANSISTOR

IRF
IRF


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