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IRGP440UD2 の電気的特性と機能

IRGP440UD2のメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP440UD2
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ IRF
ロゴ IRF ロゴ 




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IRGP440UD2 Datasheet, IRGP440UD2 PDF,ピン配置, 機能
PD - 9.1064
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP440UD2
UltraFast CoPack IGBT
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
VCES = 500V
VCE(sat) 3.0V
@VGE = 15V, IC = 22A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-641
TO-247AC
Max.
500
40
22
80
80
15
80
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
1.7
40
Units
°C/W
g (oz)
Revision 1

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IRGP440UD2 pdf, ピン配列
IRGP440UD2
25
20
15
60% of rated
v o lta g e
10
5
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Ga te drive as specified
Tu rn-on losses include
effects of reverse recovery
Power D issipation = 35W
A
100
1000
1000
100
TJ = 2 5°C
TJ = 1 50 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
100
TJ = 150°C
10 TJ = 25°C
VCC = 100V
5µs PULSE W ID TH
1
5 10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
C-643


3Pages


IRGP440UD2 電子部品, 半導体
IRGP440UD2
8.0
RG = 10
T C = 150°C
VCC = 400V
VGE = 15V
6.0
4.0
2.0
1000
VGGEE= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
0.0 A
0 10 20 30 40 50
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-646

6 Page



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部品番号部品説明メーカ
IRGP440UD2

INSULATED GATE BIPOLAR TRANSISTOR

IRF
IRF


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