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PDF IRGP450UD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGP450UD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY | |
| Fabricantes | IRF | |
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Preliminary Data Sheet PD - 9.1065
IRGP450UD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
G
C
E
n-channel
UltraFast CoPack IGBT
VCES = 500V
VCE(sat) ≤ 3.2V
@VGE = 15V, IC = 33A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-649
TO-247AC
Max.
500
59
33
120
120
29
120
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.64
0.83
—
40
—
Units
°C/W
g (oz)
Revision 1
To Order
1 page | ||
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| PDF Descargar | [ Datasheet IRGP450UD2.PDF ] | |
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