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IRGPC20UのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGPC20U |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | IRF | ||
ロゴ | |||
このページの下部にプレビューとIRGPC20Uダウンロード(pdfファイル)リンクがあります。 Total 6 pages
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1031
IRGPC20U
UltraFast IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
13
6.5
52
52
±20
5
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-669
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
2.1
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGPC20U
20
16
12
Square wave:
60% of ra ted
vo lta g e
8
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as spe cified
P o w e r D iss ipa tio n = 1 5W
Triangula r w ave:
C lam p voltage:
80% of rated
4
Ideal diodes
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
TJ = 2 5°C
TJ = 1 50 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
100
10 TJ = 1 50 °C
TJ = 25°C
1
VCC = 100V
5µs P ULSE W ID TH
0.1
5 10 15 20
VG E , G ate-to-E m itter Volta g e (V )
Fig. 3 - Typical Transfer Characteristics
C-671
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IRGPC20U
1.2
RG = 50 Ω
T C = 150°C
VCC = 480V
1.0 V G E = 15V
0.8
0.6
0.4
0.2
0 3 6 9 12 15
IC , C ollecto r-to-Em itter C urrent (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGGEE= 20 V
TJ = 125°C
100
SA FE OP ER ATIN G AR EA
10
1
0.1
1 10 100 1000
VCE , C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC
Section D - page D-13
C-674
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6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ IRGPC20U データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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IRGPC20F | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
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IRGPC20M | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
IRGPC20MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY | IRF |