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IRGPC40FのメーカーはIRFです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGPC40F |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | IRF | ||
ロゴ | |||
このページの下部にプレビューとIRGPC40Fダウンロード(pdfファイル)リンクがあります。 Total 6 pages
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.693A
IRGPC40F
Fast Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) ≤ 2.0V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
49
27
200
200
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-81
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
0.77
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGPC40F
60
40
Square wave:
60% of rated
voltage
20
Ideal diodes
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
Power Dissipation = 35W
Triangular wave:
Clam p voltage:
80% of rated
0
0.1 1 10
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
1000
TJ = 25 °C
100
TJ = 15 0 °C
10
VGE = 15V
20µs PULSE WIDTH
1
0.1 1 10
VC E , C ollector-to-E mitter V oltage (V )
Fig. 2 - Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.01
5
VCC = 100V
5µs PULSE WIDTH
10 15
VGE , G ate-to -E m itter V o lta ge (V )
20
Fig. 3 - Typical Transfer Characteristics
C-83
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IRGPC40F
20
RG = 10 Ω
T C = 150°C
VCC = 480V
16 VGE = 15V
12
8
4
0
0 20 40 60
I C , C o llector-to -E m itte r Current (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGGEE= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
C-86
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6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ IRGPC40F データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRGPC40 | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
IRGPC40F | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
IRGPC40FD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY | IRF |
IRGPC40K | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |