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PDF IRG4PH40UD2-E Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH40UD2-E | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD - 96781
IRG4PH40UD2-E
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
IGBT co-packaged with HEXFREDTM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
Industry standard TO-247AD package with
extended leads
Benefits
Higher switching frequency capability than
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
Applications
Induction cooking systems
Microwave Ovens
Resonant Circuits
TO-247AD
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÃPulse Collector Current
dClamped Inductive Load current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Max.
1200
41
21
82
82
10
40
±20
160
65
-55 to +150
y y300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
2.5
–––
40
–––
Units
°C/W
g (oz.)
www.irf.com
1
9/17/03
1 page  
4000
3500
3000
2500
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
1500
1000
500
Coes
Cres
0
1
10
VCE, Collector-toEmitter-Voltage(V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH40UD2-E
20
VCE = 400V
IC = 21A
16
12
8
4
0
0
20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
5
VCE = 800V
4.8 VGE = 15V
TJ = 25°C
4.6 IC = 21A
4.4
4.2
4
3.8
3.6
0
10 20 30 40
RG, Gate Resistance (Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100
RG = 10 Ω
VGE = 15V
VCC = 800V
10
IC = 42A
IC = 21A
IC = 10.5A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH40UD2-E.PDF ] | |
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