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UM6116-2 の電気的特性と機能

UM6116-2のメーカーはUMCです、この部品の機能は「2K x 8 High Speed CMOS SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 UM6116-2
部品説明 2K x 8 High Speed CMOS SRAM
メーカ UMC
ロゴ UMC ロゴ 




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UM6116-2 Datasheet, UM6116-2 PDF,ピン配置, 機能
SUMO
UM6116-2/ UM6116-3/ UM6116-4
2K X 8 High Speed CMOS SRAM
Features
• Single 5V supply and high density 24 pin package
• High speed: Fast access time
70ns/90ns/120ns( max.)
• Low power standby and Standby: 5JlW (typ.)
Low power operation
Operation: 250mW (typ.)
• Completely static RAM: No clock or timing strobe
required
• Directly TTL compatible: All input and output
• Pin compatible with standard 16K EPROM/Mask ROM
• Equal access and cycle time
General Description
The UM6116 is a 16,384-bit static random access memory
organized as 2048 words by 8 bits and operates from a
sign Ie 5 volt supply. It is built with UMC's high perform-
ance CMOS process. Six-transistor full CMOS memory cell
provides low standby current and high-reliability. Inputs
and three-state outputs are TTL compatible and allow for
direct interfacing with common system bus structures. The
UM6116 is moulded in a standard 24-pin 600mil-DIP.
Pin Configuration
Block Diagram
A7
A6
As
A4
A3
A2
Al
Ao
1/01
1/02
1/03
GND
vcc
As
A9
WE
OE
A 10
CS
I/Os
1/07
1/06
1/05
1/04
- - - 0 Vec
MEMORY MATRIX
DECODER •
128 x 128
- - 0 GND
I/Os ()--~--I
COLUMN I/O
INPUT
DATA
CONTROL
COLUMN DECODER
WE 0 - - - - ,
CS
2-33

1 Page





UM6116-2 pdf, ピン配列
UM6!! 6·2/ UM6!! 6·3/ UM6!:i 6·4
A.C. Characteristics
(Vcc=5V±5%, TA =0 to +70°C)
A.C. Test Conditions
Input Pulse Levels: OV to 3.0V
Input Rise and Fall Times: 5ns
Input and Output Timing Reference Levels: 1.5V
Output Load: 1TTL Gate and Cl = 100pF (including scope and jig)
READ CYCLE
Item Symbol
Read Cycle Time
Address Access Ti me
Chip Select Access Time
Chip Selection to Output in Low Z
. Output Enable to Output Valid
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Chip Disable to Output in High Z
Output Hold from Address Change
tRC
tAA
tACS
tClZ
tOE
tOlz
tCHz
tOHZ
tOH
6116-4
Min. Max.
70 -
- 70
- 70
5-
- 50
5-
0 35
0 35
5-
6116-3
Min. Max.
90 -
- 90
- 90
5-
- 65
5-
0 40
0 40
5-
6116-2
Min. Max.
120 -
- 120
- 120
10 -
- 80
10 -
0 40
0 40
10 -
Unit
ns
ns
ns
ns
ns
ns
ns·
ns
ns
WRITE CYCLE
Item
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set Up Time
Write Pulse Width
Write Recovery Time
Output Disable to Output in High Z
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
Symbol
twc
tcw
tAW
t AS
twp
tWR
tOHZ
tWHZ
tow
tOH
tow
6116-4
Min. Max.
70 -
45 -
65 -
10 -
45 -
5-
0 35
0 40
30 -
5-
0-
6116-3
Min. Max.
90 -
55 -
80 -
10 -
55 -
5-
0 40
0 50
30 -
5-
0-
6116-2
Min. Max.
120 -
70 -
105 -
20 -
70 -
5-
0 40
0 50
35 -
5-
5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Capacitance* (f = 1MHz, TA = 25°C)
Item Symbol
Input Capacitance
Cin
Input/Output Capacitance
CI/O
*This parameter is sampled and not 100% tested.
Test Conditions
Vin = OV
VI/O = OV
Max.
8
10
Unit
pF
pF
2-35


3Pages





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共有リンク

Link :


部品番号部品説明メーカ
UM6116-2

2K x 8 High Speed CMOS SRAM

UMC
UMC
UM6116-25

(UM6116-35 / UM6116-45) 2k x 8 High Speed CMOS SRAM

UMC
UMC
UM6116-3

2K x 8 High Speed CMOS SRAM

UMC
UMC
UM6116-4

2K x 8 High Speed CMOS SRAM

UMC
UMC


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