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IRHM57260SE PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM57260SE
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ IRF
ロゴ IRF ロゴ 



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IRHM57260SE Datasheet, IRHM57260SE PDF,ピン配置, 機能
PD - 93880B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57260SE
200V, N-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHM57260SE 100K Rads (Si)
RDS(on) ID
0.04935A*
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
35*
35* A
140
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20
500
35
25
10
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
01/30/03

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RADIATION HARDENED POWER MOSFET THRU-HOLE

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