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PDF IRHM57260SE Data sheet ( Hoja de datos )
| Número de pieza | IRHM57260SE | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | IRF | |
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PD - 93880B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57260SE
200V, N-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHM57260SE 100K Rads (Si)
RDS(on) ID
0.049Ω 35A*
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Units
35*
35* A
140
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
±20
500
35
25
10
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
01/30/03
1 page  
Pre-Irradiation
IRHM57260SE
10000
8000
6000
4000
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10msec
100 1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRHM57260SE.PDF ] | |
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