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IRHM7Z60 の電気的特性と機能

IRHM7Z60のメーカーはIRFです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM7Z60
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ IRF
ロゴ IRF ロゴ 




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IRHM7Z60 Datasheet, IRHM7Z60 PDF,ピン配置, 機能
PD - 91701B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7Z60
30V, N-CHANNEL
RAD-HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHM7Z60
IRHM3Z60
IRHM4Z60
IRHM8Z60
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
0.01435*A
0.01435*A
0.01435*A
0.01435*A
TO-254AA
International Rectifier’s RAD-Hard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
35*
35* A
140
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
±20
500
35
25
0.35
-55 to 150
V
mJ
A
mJ
V/ns
oC
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (Typical )
g
For footnotes refer to the last page
*Current is limited by internal wire diameter
www.irf.com
1
12/20/01

1 Page





IRHM7Z60 pdf, ピン配列
RPraed-iIarrtiaodniaCtihoanracteristics
IRHM7Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
300 - 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
30 —
30 — V
2.0 4.0 1.25 4.5
— 100
— -100
— 100 nA
— -100
— 25
— 50 µA
— 0.014 — 0.035
— 0.014 — 0.035
— 1.5 — 1.5 V
VGS = 12V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=24V, VGS =0V
VGS = 12V, ID =15A
VGS = 12V, ID =15A
VGS = 0V, IS = 35A
1. Part number IRHM7Z60
2. Part numbers IRHM3Z60, IRHM4Z60 and IRHM8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
MeV/(mg/cm²)) (MeV)
(µm)
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
36.8
305
39
30
30
30
25
20
I
59.9
345
32.8
25
25
20
15
10
AU
80.3
313
26.5
22.5
22.5
15
10
_
35
30
25
20
15
10
5
0
0
Br
I
AU
-5 -10 -15 -20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHM7Z60 電子部品, 半導体
IRHM7Z60
Pre-Irradiation
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHM7Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE

IRF
IRF
IRHM7Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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