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IRHM9064のメーカーはIRFです、この部品の機能は「TRANSISTOR P-CHANNEL」です。 |
部品番号 | IRHM9064 |
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部品説明 | TRANSISTOR P-CHANNEL | ||
メーカ | IRF | ||
ロゴ | |||
このページの下部にプレビューとIRHM9064ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
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Provisional Data Sheet No. PD-9.1438
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM9064
P-CHANNEL
RAD HARD
-60 Volt, 0.060Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of sur-
viving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
Absolute Maximum Ratings
Product Summary
Part Number BVDSS
IRHM9064
-60V
RDS(on)
0.060Ω
ID
-35*A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n IdenticalPre-andPost-ElectricalTestConditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n CeramicEyelets
Pre-Radiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
IRHM9064
-35*
-26
-168
250
2.0
± 20
500
-35*
25
-5.5
-55 to 150
Units
A
W
W/K
V
mJ
A
mJ
V/ns
300 (0.063 in. (1.6mm) from case for 10s oC
9.3 (typical)
g
To Order
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IRHM9064
Index
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Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability.The hard-
ness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
VDSS bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 105 Rads (Si) are identi-
cal and are presented in Table 1. The values in Table
1 will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-radiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison. It should be noted that at a ra-
diation level of 1 x 105 Rads (Si) no changes in limits
are specified in DC parameters.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier radiation hardened P-Channel HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments and the results are shown
in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHM9064
100K Rads (Si) Units
Min Max
Test Conditions
-200 — V
VGS = 0V, ID = -1.0mA
-2.0 -4.0
VGS = VDS, ID = -1.0mA
— -100 nA
VGS = -20V
— 100
VGS = 20V
— -25 µA VDS=0.8 x Max Rating, VGS=0V
— 0.060 Ω
VGS = -12V, ID = -26A
— -3.0 V TC = 25°C, IS = -35A,VGS = 0V
Table 2. High Dose Rate
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Test Conditions
— — -48
— -100 —
— -800
0.1 — —
——
— -100
— -160
0.8 —
-48 V Applied drain-to-source voltage during
gamma-dot
— A Peak radiation induced photo-current
A/µsec Rate of rise of photo-current
— µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter Typical
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
-60
V Ni
28
1 x 105
~41
-60
5
To Order
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部品番号 | 部品説明 | メーカ |
IRHM9064 | TRANSISTOR P-CHANNEL | IRF |