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IRHM9064 の電気的特性と機能

IRHM9064のメーカーはIRFです、この部品の機能は「TRANSISTOR P-CHANNEL」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM9064
部品説明 TRANSISTOR P-CHANNEL
メーカ IRF
ロゴ IRF ロゴ 




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IRHM9064 Datasheet, IRHM9064 PDF,ピン配置, 機能
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Provisional Data Sheet No. PD-9.1438
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM9064
P-CHANNEL
RAD HARD
-60 Volt, 0.060, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of sur-
viving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
Absolute Maximum Ratings
Product Summary
Part Number BVDSS
IRHM9064
-60V
RDS(on)
0.060
ID
-35*A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n IdenticalPre-andPost-ElectricalTestConditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n CeramicEyelets
Pre-Radiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ‚
IAR Avalanche Current 
EAR
Repetitive Avalanche Energy 
dv/dt
Peak Diode Recovery dv/dt ƒ
TJ Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
IRHM9064
-35*
-26
-168
250
2.0
± 20
500
-35*
25
-5.5
-55 to 150
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
300 (0.063 in. (1.6mm) from case for 10s oC
9.3 (typical)
g
To Order

1 Page





IRHM9064 pdf, ピン配列
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IRHM9064
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Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability.The hard-
ness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
VDSS bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 105 Rads (Si) are identi-
cal and are presented in Table 1. The values in Table
1 will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-radiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison. It should be noted that at a ra-
diation level of 1 x 105 Rads (Si) no changes in limits
are specified in DC parameters.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier radiation hardened P-Channel HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments and the results are shown
in Table 3.
Table 1. Low Dose Rate † ‡
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance One
Diode Forward Voltage „
IRHM9064
100K Rads (Si) Units
Min Max
Test Conditions Š
-200 — V
VGS = 0V, ID = -1.0mA
-2.0 -4.0
VGS = VDS, ID = -1.0mA
— -100 nA
VGS = -20V
— 100
VGS = 20V
— -25 µA VDS=0.8 x Max Rating, VGS=0V
— 0.060
VGS = -12V, ID = -26A
— -3.0 V TC = 25°C, IS = -35A,VGS = 0V
Table 2. High Dose Rate ˆ
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Test Conditions
— — -48
— -100 —
— -800
0.1 — —
——
— -100
— -160
0.8 —
-48 V Applied drain-to-source voltage during
gamma-dot
— A Peak radiation induced photo-current
A/µsec Rate of rise of photo-current
— µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects ‰
Parameter Typical
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
-60
V Ni
28
1 x 105
~41
-60
5
To Order


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部品番号部品説明メーカ
IRHM9064

TRANSISTOR P-CHANNEL

IRF
IRF


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