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IRHM9150 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM9150
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ IRF
ロゴ IRF ロゴ 



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IRHM9150 Datasheet, IRHM9150 PDF,ピン配置, 機能
PD - 90889D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHM9150 100K Rads (Si) 0.080
IRHM93150 300K Rads (Si) 0.080
IRHM9150
JANSR2N7422
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD HardHEXFET® TECHNOLOGY
ID
-22A
-22A
QPL Part Number
JANSR2N7422
JANSF2N7422
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
-22
-14 A
-88
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20
500
-22
15
-23
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
9.3 (typical)
g
For footnotes refer to the last page
www.irf.com
1
2/18/03

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