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IRHM9160 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM9160
部品説明 TRANSISTOR P-CHANNEL
メーカ IRF
ロゴ IRF ロゴ 



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IRHM9160 Datasheet, IRHM9160 PDF,ピン配置, 機能
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Provisional Data Sheet No. PD-9.1415
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM9160
P-CHANNEL
RAD HARD
-100 Volt, 0.087, RAD HARD HEXFET
Product Summary
International Rectifier’s P-channel RAD HARD tech-
nology HEXFETs demonstrate excellent threshold
voltage stability and breakdown voltage stability at
total radiation doses as high as 105 Rads (Si). Under
identical pre- and post-radiation test conditions, In-
ternational Rectifier’s P-channel RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x
1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect, (SEE),
testing of International Rectifier ’s P-channel RAD
HARD HEXFETs has demonstrated virtual immunity
to SEE failure. Since the P-channel RAD HARD pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
P-channel RAD HARD HEXFET transistors also fea-
ture all of the well-established advantages of MOS-
FETs, such as voltage control, very fast switching, ease
of paralleling and temperature stability of the electri-
cal parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Part Number
IRHM9160
BV DSS
-100V
RDS(on)
ID
0.087 -35*A
Features:
s Radiation Hardened up to 1 x 105 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Electrically Isolated
s Ceramic Eyelets
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
dv/dt
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Notes: See Page 4.
*ID current limited by pin diameter
Weight
To Order
IRHM9160
-35*
-22
-140
250
2.0
±20
500
-35
25
-5.5
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g

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