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IRHM9260 の電気的特性と機能

IRHM9260のメーカーはIRFです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM9260
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ IRF
ロゴ IRF ロゴ 




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IRHM9260 Datasheet, IRHM9260 PDF,ピン配置, 機能
PD - 93858
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM9260 100K Rads (Si)
IRHM93260 300K Rads (Si)
RDS(on)
0.160
0.160
IRHM9260
JANSR2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-HardHEXFET® TECHNOLOGY
ID QPL Part Number
-27A JANSR2N7426
-27A JANSF2N7426
TO-254AA
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T J Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
-27
-17 A
-108
250 W
2.0 W/°C
±20 V
500 mJ
-27 A
25 mJ
-9.0
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
11/27/00

1 Page





IRHM9260 pdf, ピン配列
Radiation Characteristics
IRHM9260, JANSR2N7426
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
Min Max
300K Rads (Si)2
Units
Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode Forward Voltage
-200
-2.0
-4.0
-100
100
- 25
0.154
-200
-2.0
-5.0
-100
100
-25
0.154
0.160 — 0.160
-3.3 —
-3.3
V
nA
µA
V
1. Part number IRHM9260
2. Part number IRHM93260
Test Conditions
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS= -160V, VGS =0V
VGS = -12V, ID =-17A
VGS = -12V, ID = -17A
VGS = 0V, IS = -27A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28.0
Br 36.8
Energy
(MeV)
285
305
Range
(µm)
43.0
39.0
@VGS=0V @VGS=5V
-200
-200
-200
-200
VDS (V)
@VGS=10V
-200
-125
@VGS=15V
-200
-75
@VGS=20V
-250
-200
-150
-100
-50
0
0
Cu
Br
5 10 15 20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHM9260 電子部品, 半導体
IRHM9260, JANSR2N7426
Pre-Irradiation
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
-12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHM9260

RADIATION HARDENED POWER MOSFET THRU-HOLE

IRF
IRF


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