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IRHMS593160 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHMS593160
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ IRF
ロゴ IRF ロゴ 



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IRHMS593160 Datasheet, IRHMS593160 PDF,ピン配置, 機能
PD - 94283B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160
100V, P-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMS597160 100K Rads (Si)
IRHMS593160 300K Rads (Si)
RDS(on)
0.05
0.05
ID
-45A*
-45A*
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
n High Electrical Conductive Package
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-45*
-30
-180
208
1.67
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
±20
480
-45
20.8
-6.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063in./1.6mm from case for 10s)
Weight
9.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
07/20/04

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RADIATION HARDENED POWER MOSFET THRU-HOLE

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