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IRFSL3507 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL3507
部品説明 HEXFET Power MOSFET
メーカ IRF
ロゴ IRF ロゴ 



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IRFSL3507 Datasheet, IRFSL3507 PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 96903A
IRFB3507
IRFS3507
IRFSL3507
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
75V
7.0m:
8.8m:
97A
G DS
TO-220AB
IRFB3507
G DS
D2Pak
IRFS3507
G DS
TO-262
IRFSL3507
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case k
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220 k
RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk
www.irf.com
Max.
97c
69c
390
190
1.3
± 20
5.0
-55 to + 175
300
10lbxin (1.1Nxm)
280
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
11/04/04

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