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IRFSL38N20D PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL38N20D
部品説明 Power MOSFET
メーカ IRF
ロゴ IRF ロゴ 



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IRFSL38N20D Datasheet, IRFSL38N20D PDF,ピン配置, 機能
PD - 94358
SMPS MOSFET
IRFB38N20D
IRFS38N20D
IRFSL38N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.054
ID
44A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB38N20D
D2Pak
TO-262
IRFS38N20D IRFSL38N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Notes  through ‡ are on page 11
www.irf.com
Max.
44
32
180
3.8
320
2.1
± 30
9.5
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.50
–––
–––
Max.
0.47
–––
62
40
Units
°C/W
1
12/12/01

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