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IRFSL41N15D PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL41N15D
部品説明 HEXFET Power MOSFET
メーカ IRF
ロゴ IRF ロゴ 



Total 12 pages
		

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IRFSL41N15D Datasheet, IRFSL41N15D PDF,ピン配置, 機能
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
150V
PD - 93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
HEXFET® Power MOSFET
RDS(on) max
0.045:
ID
41A
TO-220AB TO-220 FullPak D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation, D2Pak
PD @TC = 25°C Power Dissipation, TO-220
PD @TC = 25°C Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJC Junction-to-Case, Fullpak
hRθcs Case-to-Sink, Flat, Greased Surface
hRθJA Junction-to-Ambient, TO-220
iRθJA Junction-to-Ambient, D2Pak
RθJA Junction-to-Ambient, Fullpak
Notes  through ‡ are on page 12
www.irf.com
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
°C/W
1
07/16/03

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