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IRFSL41N15D の電気的特性と機能

IRFSL41N15DのメーカーはIRFです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFSL41N15D
部品説明 HEXFET Power MOSFET
メーカ IRF
ロゴ IRF ロゴ 




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IRFSL41N15D Datasheet, IRFSL41N15D PDF,ピン配置, 機能
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
150V
PD - 93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
HEXFET® Power MOSFET
RDS(on) max
0.045:
ID
41A
TO-220AB TO-220 FullPak D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation, D2Pak
PD @TC = 25°C Power Dissipation, TO-220
PD @TC = 25°C Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJC Junction-to-Case, Fullpak
hRθcs Case-to-Sink, Flat, Greased Surface
hRθJA Junction-to-Ambient, TO-220
iRθJA Junction-to-Ambient, D2Pak
RθJA Junction-to-Ambient, Fullpak
Notes  through ‡ are on page 12
www.irf.com
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
°C/W
1
07/16/03

1 Page





IRFSL41N15D pdf, ピン配列
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
IRFB/IRFIB/IRFS/IRFSL41N15D
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 6.0V
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175° C
TJ = 25° C
10
V DS= 25V
20µs PULSE WIDTH
1
6 7 8 9 10 11
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFSL41N15D 電子部品, 半導体
IRFB/IRFIB/IRFS/IRFSL41N15D
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
1200
1000
800
TOPTOP
BOTTOM
BOTTOM
IDD
173.13AA0A
182A1A
25A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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共有リンク

Link :


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