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PDF IRFSL4710 Data sheet ( Hoja de datos )
| Número de pieza | IRFSL4710 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IRF | |
| Logotipo |  |
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Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
PD- 94080
IRFB4710
IRFS4710
IRFSL4710
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.014Ω
ID
75A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB4710
D2Pak
IRFS4710
TO-262
IRFSL4710
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
75
53
300
3.8
200
1.4
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.74
–––
62
40
Units
°C/W
1
3/16/01
1 page  
IRFB/IRFS/IRFL4710
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
5 Page 
IRFB/IRFS/IRFL4710
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
TRL
10.90 (.429)
10.70 (.421)
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
330.00
(14.173)
MAX.
6 0.0 0 (2.36 2)
M IN .
Notes:
NO TES :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 190µH
Coss eff. is a fixed capacitance that gives the same charging time
RG = 25Ω, IAS = 45A, VGS = 10V
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
www.irf.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRFSL4710.PDF ] | |
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