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IRFS610B データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFS610B
部品説明 200V N-Channel MOSFET
メーカ Fairchild
ロゴ Fairchild ロゴ 

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IRFS610B Datasheet, IRFS610B PDF,ピン配置, 機能
IRF610B/IRFS610B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
• 3.3A, 200V, RDS(on) = 1.5@VGS = 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
IRF610B
IRFS610B
200
3.3 3.3 *
2.1 2.1 *
10 10 *
± 30
40
3.3
3.8
5.5
38 22
0.31 0.18
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF610B
3.28
0.5
62.5
IRFS610B
5.71
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002

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