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PDF IRFS9630 Data sheet ( Hoja de datos )

Número de pieza IRFS9630
Descripción Advanced Power MOSFET
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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No Preview Available ! IRFS9630 Hoja de datos, Descripción, Manual

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
Low RDS(ON) : 0.581 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
SFS9630
BVDSS = -200 V
RDS(on) = 0.8
ID = -4.4 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-4.4
-3.3
-18
+_ 30
258
-4.4
3.3
-5.0
33
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.79
62.5
Units
oC/W
©1999 Fairchild Semiconductor Corporation
Rev. B

1 page




IRFS9630 pdf
P-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SFS9630
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
VDS
-10V
Qgs
DUT
-3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
-10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
DUT
t on
td(on)
tr
Vin 10%
t off
td(off)
tf
Vout
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
RG
LL
ID
DUT
C
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
t p Time
VDD
ID (t)
VDS (t)
-10V
tp
IAS
BVDSS

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