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IRFS9N60A の電気的特性と機能

IRFS9N60AのメーカーはIRFです、この部品の機能は「SMPS MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFS9N60A
部品説明 SMPS MOSFET
メーカ IRF
ロゴ IRF ロゴ 




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IRFS9N60A Datasheet, IRFS9N60A PDF,ピン配置, 機能
PD - 91817A
SMPS MOSFET
IRFS9N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
HEXFET® Power MOSFET
VDSS
600V
RDS(on) max ID
0.75
9.2A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G DS
D2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.2
5.8
37
170
1.3
± 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Active Clamped Forward
l Main Switch
Notes  through … are on page 9
www.irf.com
1
9/23/99

1 Page





IRFS9N60A pdf, ピン配列
IRFS9N60A
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
1
4.7V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
10
4.7V
20µs PULSE WIDTH
TJ = 150 °C
1
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150 ° C
10
TJ = 25° C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 9.2A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFS9N60A 電子部品, 半導体
IRFS9N60A
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
600
ID
TOP
4.1A
500 5.8A
BOTTOM 9.2A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


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